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| T2550H-600T SNUBBERLESSTM HIGH TEMPERATURE 25A TRIACS MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 25 600 50 Unit A V mA DESCRIPTION Specifically designed for use in high temperature environment (found in hot appliances such as cookers, ovens, hobs, electric heaters, coffee machines...), the new 25 Amps T25500H triacs provide an enhanced performance in terms of power loss and thermal dissipation. This allows optimization of the heatsinking dimensioning, leading to space and cost effectivness when compared to electro-mechnical solutions. Based on ST snubberless technology, they offer high commutation switching capabilities and high noise immunity levels. And, thanks to their clip assembly technique, they provide a superior performance in surge current handling. ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns F = 60 Hz F = 50 Hz TO-220AB Value Tc = 125C t = 16.7 ms t = 20 ms 25 260 250 340 50 700 4 1 - 40 to + 150 - 40 to + 150 Unit A A It dI/dt tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 s Tj = 150C Tj = 25C Tj = 150C Tj = 150C A s A/s V A W C VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range April 2002 - Ed: 5A 1/5 T2550H-600T ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol I GT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 150C Tj = 150C I - II - III Test Conditions RL = 33 RL = 3.3 k Tj = 150C Quadrant I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 1.3 0.15 75 90 500 11.1 Unit mA V V mA mA V/s A/ms (dI/dt)c (2) Without snubber STATIC CHARACTERISTICS Symbol V TM (2) Vto (2) Rd (2) IDRM IRRM VDRM / V RRM = 400 V (at mains peak voltage) ITM = 35 A tp = 380 s Test Conditions Tj = 25C Tj = 150C Tj = 150C Tj = 25C Tj = 150C Tj = 150C MAX. MAX. MAX. MAX. Value 1.5 0.80 19 5 8.5 5.5 mA Unit V V m A Threshold voltage Dynamic resistance VDRM = VRRM Note 1: minimum IGT is guaranted at 10% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCE Symbol Rth(j-c) Junction to case (AC) Parameter Value 0.8 Unit C/W PRODUCT SELECTOR Part Number T2550H-600T Voltage 600 V Sensitivity 50 mA Type Snubberless Package TO-220AB ORDERING INFORMATION 2/5 T2550H-600T OTHER INFORMATION Part Number T2550H-600T T2550H-600TRG Marking T2550H600T T2550H600T Weight 2.3 g 2.3 g Base quantity 250 50 Packing mode Bulk Tube Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus case temperature (full cycle). Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). 3/5 T2550H-600T Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It. Fig. 7: values). On-state characteristics (maximum Fig. 8: Relative variation of critical rate of decrease of main current versus junction temperature (typical values). Fig. 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Fig. 10: Leakage current versus junction temperature for different values of blocking voltage (typical values). 4/5 T2550H-600T Fig. 11: Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance. PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. Millimeters Min. A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M 15.20 3.75 Typ. Max. Min. Inches Typ. 0.147 Max. 0.625 15.90 0.598 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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